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基于InP基异变缓冲层的3微米波长新结构激光器研究
  • 项目名称：基于InP基异变缓冲层的3微米波长新结构激光器研究
  • 项目类别：青年科学基金项目
  • 批准号：61204133
  • 申请代码：F040104
  • 项目来源：国家自然科学基金
  • 研究期限：2013-01-01-2015-12-31
  • 项目负责人：顾溢
  • 依托单位：中国科学院上海微系统与信息技术研究所
  • 批准年度：2012
中文摘要：

中红外波段激光器不仅具有丰富的有待认知的物理内涵而且在环境保护、人口健康和国家社会安全方面有重要的应用。GaSb基锑化物激光器和InP基量子级联激光器已取得重大进展，但其在中红外短波端3微米波长附近均受到一些限制。本项目提出基于InP基异变缓冲层特殊复合衬底研究不含锑3 微米波长新结构量子阱激光器。在前期预研工作中已观测到InP基异变缓冲层上的量子阱结构室温光致发光波长达3.05微米，证明了此项目思路的可行性。本项目研究内容包括材料物理分析与缓冲层结构设计、材料生长优化、激光器结构设计与器件研究。针对起关键核心作用的异变缓冲层材料进行重点研究，采用数字合金位错隔离层创新结构、探索迁移增强外延生长初始层并结合剩余应力调控，深入开展原子迁移、晶格弛豫和穿透位错产生、抑制、湮灭的行为及机理研究，进一步基于优化的InP基异变缓冲层开展无锑3微米波长原型量子阱激光器研究。

中文主题词： 异变缓冲层；InP基；量子阱激光器；中红外；气态源分子束外延
结论摘要：

英文主题词metamorphic buffer；InP-based；quantum well lasers；mid-infrared；gas source molecular beam epitaxy

成果综合统计
成果类型
数量
  • 期刊论文
  • 会议论文
  • 专利
  • 获奖
  • 著作
  • 37
  • 1
  • 0
  • 0
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期刊论文
InP-based InxGa1-xAs metamorphic buffers with different mismatch grading rates
2.7 um InAs quantum well lasers on InP-based InAlAs metamorphic buffer layers
InAs/In0.83Al0.17As quantum wells on GaAs substrate with type-I emission at 2.9 um
Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs p
Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4μm
Optimization of InAlAs buffers for growth of GaAs-based high indium content InGaAs photodetectors
Fabrication of column shape two dimensional photonic crystals: double developments in holographic li
Effects of material parameters on the temperature dependent spectral response of In0.83Ga0.17As phot
2.4 um InP-based antimony-free triangular quantum well lasers in continuous-wave operation above roo
Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy
Type-I mid-infrared InAs/InGaAs quantum well lasers on InP-based metamorphic InAlAs buffers
Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photolum
Absorption coefficients of In0.8Ga0.2As at room temperature and 77K
Effects of compositional overshoot on InP-based InAlAs metamorphic graded buffer
InAs/InGaAs digital alloy strain-compensated quantum well lasers
Analysis and evaluation of uniformity of SWIR InGaAs FPA - Part II: Processing issues and overall ef
Performance of gas source MBE grown InAlGaAs photovoltaic detectors tailored to 1.4 um
GaAs-based In0.83Ga0.17As photodetector structure grown by gas source molecular beam epitaxy
Evaluation of the performance correlated defects of metamorphic InGaAs photodetector structures thro
Improved Performance of 2.2-mu m InAs/InGaAs QW Lasers on InP by Using Triangular Wells
Dark current characteristics of GaAs-based 2.6 um InGaAs photodetectors on different types of InAlAs
Tailoring the performances of low operating voltage InAlAs/InGaAs avalanche photodetectors
Correction of response spectra of quantum type photodetectors measured by FTIR
Dark current suppression in metamorphic In0.83Ga0.17As photodetectors with In0.66Ga0.34As/InAs super
Effects of continuously graded or step-graded InxAl1？xAs buffer on the performance of InP-based In0.
Effect of bismuth surfactant on InP-based highly strained InAs/InGaAs triangular quantum wells
Carrier scattering and relaxation dynamics in n-type In0:83Ga0:17As as a function of temperature and
Low voltage and small gain slope InAlAs/InGaAs avalanche photodiodes with a moderate p-doped multipl
InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer
InP-based Inx Ga1-xAs metamorphic buffers with different mismatch grading rates
全息光刻和二次显影法制备柱形二维光子晶体
InAs/InGaAs数字合金应变补偿量子阱激光器
FTIR测量的量子型光电探测器响应光谱校正
会议论文
High-performance InP-based InAs triangular quantum well lasers operating beyond 2 μm
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顾溢的项目
InP基InGaAsBi材料及其短波红外探测器研
　微弱光信号探测新结构InGaAs雪崩探测器设计和研制基础研究
期刊论文 1