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Dark current characteristics of GaAs-based 2.6 um InGaAs photodetectors on different types of InAlAs
  • ISSN号：0022-3727
  • 期刊名称：Journal of Physics D: Applied Physics
  • 时间：2014.2.26
  • 页码：085107-
  • 相关项目：基于InP基异变缓冲层的3微米波长新结构激光器研究
作者： Gu, Y.|Li, H. S. B. Y.|Cao, Y. Y.|Xi, S. P.|
同期刊论文项目
基于InP基异变缓冲层的3微米波长新结构激光器研究
期刊论文 37 会议论文 1
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