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Effect of bismuth surfactant on InP-based highly strained InAs/InGaAs triangular quantum wells
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2015.12.1
  • 页码：212104-
  • 相关项目：基于InP基异变缓冲层的3微米波长新结构激光器研究
作者： X. Y. Chen|S. P. Xi|B. Du|Y. J. Ma|
同期刊论文项目
基于InP基异变缓冲层的3微米波长新结构激光器研究
期刊论文 37 会议论文 1
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