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InP-based InxGa1-xAs metamorphic buffers with different mismatch grading rates
  • ISSN号：1674-4926
  • 期刊名称：Chinese Journal of Semiconductors
  • 时间：2013.7
  • 页码：-
  • 相关项目：基于InP基异变缓冲层的3微米波长新结构激光器研究
作者： Zhou Li|Cao Yuanying|Li Haosibaiying|Zhang Yonggang|
同期刊论文项目
基于InP基异变缓冲层的3微米波长新结构激光器研究
期刊论文 37 会议论文 1
同项目期刊论文
2.7 um InAs quantum well lasers on InP-based InAlAs metamorphic buffer layers
InAs/In0.83Al0.17As quantum wells on GaAs substrate with type-I emission at 2.9 um
Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs p
Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4μm
Optimization of InAlAs buffers for growth of GaAs-based high indium content InGaAs photodetectors
Fabrication of column shape two dimensional photonic crystals: double developments in holographic li
Effects of material parameters on the temperature dependent spectral response of In0.83Ga0.17As phot
2.4 um InP-based antimony-free triangular quantum well lasers in continuous-wave operation above roo
Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy
Type-I mid-infrared InAs/InGaAs quantum well lasers on InP-based metamorphic InAlAs buffers
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Absorption coefficients of In0.8Ga0.2As at room temperature and 77K
Effects of compositional overshoot on InP-based InAlAs metamorphic graded buffer
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Analysis and evaluation of uniformity of SWIR InGaAs FPA - Part II: Processing issues and overall ef
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Improved Performance of 2.2-mu m InAs/InGaAs QW Lasers on InP by Using Triangular Wells
Dark current characteristics of GaAs-based 2.6 um InGaAs photodetectors on different types of InAlAs
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Correction of response spectra of quantum type photodetectors measured by FTIR
Dark current suppression in metamorphic In0.83Ga0.17As photodetectors with In0.66Ga0.34As/InAs super
Effects of continuously graded or step-graded InxAl1？xAs buffer on the performance of InP-based In0.
Effect of bismuth surfactant on InP-based highly strained InAs/InGaAs triangular quantum wells
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Low voltage and small gain slope InAlAs/InGaAs avalanche photodiodes with a moderate p-doped multipl
InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer
InP-based Inx Ga1-xAs metamorphic buffers with different mismatch grading rates
全息光刻和二次显影法制备柱形二维光子晶体
InAs/InGaAs数字合金应变补偿量子阱激光器
FTIR测量的量子型光电探测器响应光谱校正
期刊信息
  • 《半导体学报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编：李树深
  • 地址：北京912信箱
  • 邮编：100083
  • 邮箱：cjs@semi.ac.cn
  • 电话：010-82304277
  • 国际标准刊号：ISSN：1674-4926
  • 国内统一刊号：ISSN：11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
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  • 被引量:7754