中文摘要：

提供了一种新的方法，用于建立深亚微米电路中MOST的伏安特性方程．该方法根据深亚微米MOST的数值模拟结果或实测结果，直接将小尺寸MOST特性方程用函数拟合技术，在Matlab中用程序实现，所建立的伏安特性方程没有非饱和区、饱和区的间断点，是一个不分区间的统一表达式．对所得到的结果进行了计算验证，证明了建模方法和结果的正确性．

英文摘要：

We present a novel method, used to build the Ⅰ-Ⅴ characteristic equations of the MOSTs in the deep sub -micron circuits. Through the function fitting based on the results of numerical simulation or actual measurements of deep sub - micron MOSTs, we can obtain the Ⅰ-Ⅴ characteristic equations straightly in Matlab. The Ⅰ-Ⅴ equations have no discontinuous points of the nonsaturation and saturation regions, so they are non -divisional and unitive expressions. It proves the method is effective and the results are correct.