中文摘要：

根据载流子分布曲线近似，通过求解泊松方程，得到了多晶硅中电场及其电势的分布，计算了在不同掺杂浓度下多晶硅量子效应所引起的MOSFET阅值电压的偏移，并与数值模拟的结果进行了比较，表明其具有较好的准确性。

英文摘要：

Based on the approximation for the charge distribution, by solving poisson equations, this paper found the distributions of electric field and electrostatic potential. Then the shift of threshold voltages due to polysilicon quantization with different polysilicon doping concentrations is calculated. The calculated results are compared with the numerical simulation results.