中文摘要：

分析了高压LDMOS在-27℃至300℃温度范围内的温度特性，并给出了阈值电压温度系数的计算公式．根据计算结果，可以得到以下结论：高压LDMOS的阈值电压温度系数在相当宽的温区内是一常数；可用温度的线性表达式来计算阈值电压温度系数；薄栅氧化层和高沟道掺杂浓度可减小高压功率LDMOS的阈值电压温度系数．

英文摘要：

The temperature characteristics （at -27℃～ 300℃） on high voltage power LDMOS were discussed, and a calculation formula of threshold voltage＇s temperature coefficients was given. Computing results show that a threshold voltage temperature coefficient of a high voltage power LDMOS is a constant at a wide temperature range, and a linear expression can be used to describe its temperature characteristics. The threshold voltage temperature coefficient can be decreased by thin gate oxide film and high channel doping concentration.