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中文摘要：
场板是高压LDMOS中普遍使用的一种结终端技术，对单阶梯LDMOS场板的长度、其下方氧化层厚度以及场氧侵蚀厚度等参数进行了模拟和分析，在此基础上设计了一种新型体硅双阶梯场板LDMOS，并对其具体参数进行了细致的模拟和分析。模拟结果表明，双阶梯场板LDMOS的击穿电压比单阶梯场板LDMOS提高了15．3％，导通电阻降低了17．1％，电流驱动能力也提高了8．5％。
英文摘要：
Field plate is such a junction terminal technique that is employed prevalently in high voltage LDMOS designs. The parameters of single field plate such as its length, oxide thickness, and corroded field oxide thickness were simulated and analyzed. A new bulk silicon double field plate LDMOS was presented accompanied by its related simulations and analyses. Results from simulations show that the proposed structure can improve the breakdown by 15.3% and reduce the specific on-resistance by 17.1%. Meanwhile the current driving capability is enhanced by 8.5%.
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