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Enhanced surface modification engineering (H, F, Cl, Br, and NO2) of CdS nanowires with and without
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2015.8.7
  • 页码：-
  • 相关项目：Gd,Si/Ge掺杂GaN 材料的自旋极化和磁相互作用量子机理研究
作者： Wang, Chunrui|Xu, Xiaofeng|Wang, Jiqing|Chen, Xiaoshuang|
同期刊论文项目
Gd,Si/Ge掺杂GaN 材料的自旋极化和磁相互作用量子机理研究
期刊论文 27
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