欢迎您!
东篱公司
退出
申报数据库
申报指南
立项数据库
成果数据库
期刊论文
会议论文
著 作
专 利
项目获奖数据库
位置:
成果数据库
>
期刊
> 期刊详情页
A novel ITO/AZO/SiO2/p-Si frame SIS heterojunction fabricated by magnetron sputtering
ISSN号:0925-8388
期刊名称:Journal of Alloys and Compounds
时间:2013.12.25
页码:28-34
相关项目:Gd,Si/Ge掺杂GaN 材料的自旋极化和磁相互作用量子机理研究
作者:
ChunRui Wang|HuaiZhong Xing|Lei Zhao|YiChuan Rui|
同期刊论文项目
Gd,Si/Ge掺杂GaN 材料的自旋极化和磁相互作用量子机理研究
期刊论文 27
同项目期刊论文
Ga/N共掺杂对InSb电子结构的影响
The effect of Ga/N co-doping on electronic structure of InSb
The Structural and Electronic Properties of CdS/ZnS Core-Shell Nanowires
Enhanced efficiency of p-type doping by band-offset effect in wurtzite and zinc-blende GaAs/InAs-cor
Tunable Band Gap and Conductivity Type of ZnSe/Si Core-Shell Nanowire Heterostructures
Enhanced surface modification engineering (H, F, Cl, Br, and NO2) of CdS nanowires with and without
Influences of strain on binding energies of excitons in InAs/GaAs quantum dot molecules
Fabrication of ZnS0.6Se0.4 Nanowires Using ZnS Nanowires as an In-situ Template
Observation of Cu2ZnSnS4 thin film prepared by RF magnetron sputtering for heterojunction applicatio
The effect of substrate temperature on high quality c-axis oriented AZO thin films prepared by DC re
Tuning magnetic anistropy by charge injection and strain in Fe/MoS2 bilayer heterostructures
Negative capacitance switching via VO2 band gap engineering driven by electric field
Orbital change manipulation metal-insulator transition temperature in W-doped VO2
Al_2O_3/GaSb p-MOSFET器件电学性质模拟(英文)
Al2O3/GaSb p-MOSFET器件电学性质模拟