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Enhanced efficiency of p-type doping by band-offset effect in wurtzite and zinc-blende GaAs/InAs-cor
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2013.9.7
  • 页码：-
  • 相关项目：Gd,Si/Ge掺杂GaN 材料的自旋极化和磁相互作用量子机理研究
作者： Mao, Huibing|Zhao, Qiang|Yang, Pingxiong|Xing, Huaizhong|
同期刊论文项目
Gd,Si/Ge掺杂GaN 材料的自旋极化和磁相互作用量子机理研究
期刊论文 27
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