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Influences of strain on binding energies of excitons in InAs/GaAs quantum dot molecules
  • ISSN号：0921-4526
  • 期刊名称：Physica B: Condensed Matter
  • 时间：2014.4.1
  • 页码：114-119
  • 相关项目：Gd,Si/Ge掺杂GaN 材料的自旋极化和磁相互作用量子机理研究
作者： Mao, Huibing|Zhao, Qiang|Yang, Pingxiong|Xing, Huaizhong|
同期刊论文项目
Gd,Si/Ge掺杂GaN 材料的自旋极化和磁相互作用量子机理研究
期刊论文 27
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