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Orbital change manipulation metal-insulator transition temperature in W-doped VO2
  • ISSN号：1463-9076
  • 期刊名称：Physical Chemistry Chemical Physics
  • 时间：2015
  • 页码：11638-11646
  • 相关项目：Gd,Si/Ge掺杂GaN 材料的自旋极化和磁相互作用量子机理研究
作者： Wang, Chunrui|Xing, Huaizhong|Chen, Xiaoshuang|Chu, Junhao|
同期刊论文项目
Gd,Si/Ge掺杂GaN 材料的自旋极化和磁相互作用量子机理研究
期刊论文 27
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