中文摘要：

采用射频磁控溅射技术在Si（100）基底和Pt／Ti／SiO2／Si（100）基底上生长了掺镧钛酸铅[（Pb0.9，La0.1）TiO3，PLT]铁电薄膜。用X射线衍射技术（XRD）研究了PLT10薄膜结晶性能。使用光刻工艺在Si（100）基底的PLT10薄膜上制备了叉指电极，测试了PLT10薄膜的介电性能。在室温下，测试频率为1kHz时，PLT10薄膜的介电常数为386。而采用相同工艺条件制备的具有平行电极结构的PLT10薄膜，其介电常数为365。但利用叉指电极测试的PLT10薄膜的介电常数和介电损耗随频率的下降比利用平行电极测试的PLT10薄膜的快些。这是因为叉指电极结构引入了更多的界面态影响的缘故。

英文摘要：

Lanthanum-doped lead titanate E（Pb0.9, La0.1 ）TiO3, PLT10]ferroelectric thin films were grown on Si （100） and Pt/Ti/SiO2/Si（100） substrates by RF magnetron sputtering. The crystalline properties of PLT10 films were studied by X-ray diffraction （XRD）. Photolithographic technique was applied to fabricate the interdigital electrodes of PLT10 thin films on Si（100） substrates. The dielectric properties of PLT10 thin films with different electrode were measured. At room temperature and 1kHz testing frequency, the dielectric constant of PLT10 thin film with interdigital electrodes is 386. The dielectric constant of PLT10 thin film fabricated in the same technological conditions with parallel plate electrodes structure is 365, while the dielectric constant and loss of PLT10 thin film with interdigital electrodes decreased faster than those of the film with parallel plate electrodes with frequency increasing. This is because that more influences of interface state were introduced due to the interdigital electrode configuration.