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Improved Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors by Employing Polyimide/Ch
  • ISSN号：0256-307X
  • 期刊名称：Chinese Physics Letters
  • 时间：2013.9.9
  • 页码：1-4
  • 相关项目：介电/半导体集成薄膜的分子束外延生长与界面控制研究
作者： Chu Fu-Tong|Chen Chao|Zhou Wei|Liu Xing-Zhao|
同期刊论文项目
介电/半导体集成薄膜的分子束外延生长与界面控制研究
期刊论文 35 会议论文 1
同项目期刊论文
Sodium beta-alumina thin films as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high-
Tuning two-dimensional electron gas of ferroelectric/GaN heterostructures by ferroelectric polarizat
Effects of the TiO2 buffer thickness on SrTiO3 (111) epitaxial films grown on GaN (0002)
Epitaxial growth of SrTiO3 (0 0 1) films on multilayer buffered GaN (0 0 0 2) by pulsed laser deposi
AlGaN/GaN MISHEMTs with Sodium-Beta-Alumina as the Gate Dielectrics
Modulation of 2DEG in AlGaN/GaN heterostructures by P(VDF-TrFE)
Structure and electrical characteristics of AlGaN/GaN MISHFET with Al2O3 thin film as both surface p
Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-kappa org
GaN基半导体上BiFeO_3薄膜的生长与性能研究
Integration and electrical properties of epitaxial LiNbO3 ferroelectric film on n-type GaN semicondu
GaN基底上集成介电薄膜材料的生长方法研究
Can we enhance two-dimensional electron gas from ferroelectric/GaN heterostructures?
Epitaxial Growth and Ferroelectricity of BaTiO3 on SrRuO3/TiO2 Buffered GaN
Electron trap memory characteristics of LiNbO3 film/AlGaN/GaN heterostructure
Trapping properties of LiNbO3/AlGaN/GaN metal-ferroelectric-semiconductor heterostructure characteri
Substitution of Paraelectric for Conventional Dielectric in AlGaN/GaN MISFETs
Effects of SrTiO(3)/TiO(2) buffer layer on structural and electrical properties of BiFeO(3) thin fil
Probe pressure dependence of nanoscale capacitance-voltage characteristic for AlGaN/GaN heterostruct
Normally-off characteristics of LiNbO3/AlGaN/GaN ferroelectric field-effect transistor
Study of the Integrated Growth of Dielectric Films on GaN Semiconductor Substrates
Threshold voltage modulation mechanism of AlGaN/GaN metal-insulator-semiconductor high-electron mobi
Electrical Characteristics of Pulsed Laser Deposited SrTiO3 on TiO2 Buffered AlGaN/GaN
Enhancing electrical properties of LiNbO3/AlGaN/GaN transistors by using ZnO buffers
The modulation effects of charged dielectric thin films on two-dimensional electron gas in AlGaN/GaN
以TiO_2为缓冲层在GaN上外延生长PZT铁电薄膜
无碱玻璃改性0.8BaTiO3-0.2BiYO3介电陶瓷的研究
Performance of an AIGaN/GaN MISHEMT with sodium beta-alumina for gate insulation and surface passivation
双轴应变对纤锌矿GaN、AlN、InN及其合金电子有效质量的影响
LaAlO3顶层对Pb（Zr，Ti）O3薄膜微结构和性能的影响
期刊信息
  • 《中国物理快报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国科学院物理研究所、中国物理学会
  • 主编：
  • 地址：北京中关村中国科学院物理研究所内（北京603信箱《中国物理快报》编辑部）
  • 邮编：100080
  • 邮箱：cpl@aphy.iphy.ac.cn
  • 电话：010-82649490 82649024
  • 国际标准刊号：ISSN：0256-307X
  • 国内统一刊号：ISSN：11-1959/O4
  • 邮发代号:
  • 获奖情况:
  • 中国期刊方阵“双高”期刊
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  • 被引量:190