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Trapping properties of LiNbO3/AlGaN/GaN metal-ferroelectric-semiconductor heterostructure characteri
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2010.4.4
  • 页码：0845081-0845084
  • 相关项目：介电/半导体集成薄膜的分子束外延生长与界面控制研究
作者： Zeng, Huizhong|Hao, Lanzhong|Luo, Wenbo|Liao, Xiuwei|Huang, Wen|Lin, Yuan|Li, Yanrong|
同期刊论文项目
介电/半导体集成薄膜的分子束外延生长与界面控制研究
期刊论文 35 会议论文 1
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