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Normally-off characteristics of LiNbO3/AlGaN/GaN ferroelectric field-effect transistor
  • ISSN号：0040-6090
  • 期刊名称：Thin Solid Films
  • 时间：2012.7.7
  • 页码：6313-6317
  • 相关项目：介电/半导体集成薄膜的分子束外延生长与界面控制研究
作者： Li, Y. R.|Zhu, J.|Liu, Y. J.|Liao, X. W.|Wang, S. L.|Zhou, J. J.|Kong, C.|Zeng, H. Z.|Zhang, Y.|
同期刊论文项目
介电/半导体集成薄膜的分子束外延生长与界面控制研究
期刊论文 35 会议论文 1
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