中文摘要：

采用脉冲激光沉积（PLD）法在蓝宝石衬底上先后外延生长了ZnO：Al（ZAO）和LiNbO3（LN）薄膜。通过X射线衍射分析（XRD）可知二者之间的外延关系为：LN（001）／／ZAO（001）、LN[110]／／ZAO[1^-10]、LN[100]／／ZAO[1^-20]。制备了Au／LN／ZAO和ZAO／LN／ZAO两种电容器结构，对其进行了电流．电压（J-E）测试和铁电（P-E）分析，结果表明：LN／ZAO集成结构具有整流作用，ZAO／LN／ZAO结构表现出较好的绝缘性能，所制备的LN薄膜在室温下的剩余极化强度（Pr）约为1×10^-6C／cm^2，温度的升高能够促进电畴的翻转，使Pr增加为3×10^-6C／cm^2。

英文摘要：

The ZnO：Al （ZAO） and LiNbO3 （LN） thin films were epitaxially deposited on sapphire substrate by pulsed laser deposition （PLD）. Through X-ray diffraction analysis （XRD）, It is obtained that the epitaxial relationship of the two films is： LN（001）//ZAO（001）, LN[1^-10]//ZAO[110], LN[100]//ZAO[1^-20].-Different top electrodes, Au and ZAO, were prepared on the LN film respectively, then the conduction （J-E） and ferroelectric properties （P-E） of the LN film were studied. The results show that LN/ZAO integrated structure has a rectifying effect, and good insulating properties are exhibited in ZAO/LN/ZAO structure. Moreover, it is showed that the remanent polarization （Pr） of LN film deposited on ZAO is about 1×10^-6C/cm^2 at room temperature. The ferroelectric domain switching of the LN film is enhanced with increasing of the measured temperature, so that the Pr increases to 3× 10^-6C/cm^2 at 300 ℃.