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Electron trap memory characteristics of LiNbO3 film/AlGaN/GaN heterostructure
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2010.1.1
  • 页码：0321031-0321033
  • 相关项目：介电/半导体集成薄膜的分子束外延生长与界面控制研究
作者： Hao, L. Z.|Zhu, J.|Luo, W. B.|Zeng, H. Z.|Li, Y. R.|Zhang, Y.|
同期刊论文项目
介电/半导体集成薄膜的分子束外延生长与界面控制研究
期刊论文 35 会议论文 1
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