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Threshold voltage modulation mechanism of AlGaN/GaN metal-insulator-semiconductor high-electron mobi
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2012.3.3
  • 页码：1335071-1335073
  • 相关项目：介电/半导体集成薄膜的分子束外延生长与界面控制研究
作者： Chen, Chao|Liu, Xingzhao|Zhang, Jihua|Tian, Benlang|Jiang, Hongchuan|Zhang, Wanli|Li, Yanrong|
同期刊论文项目
介电/半导体集成薄膜的分子束外延生长与界面控制研究
期刊论文 35 会议论文 1
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