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Nitrogen-doped Ge3Te2 materials with self-restricted active region for low power phase-change memory
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2013
  • 页码：034310-034314
  • 相关项目：高居里温度自旋量子结构与器件
作者： J. H.|C.|Yang|P. X.|Wu|L. C.|Song|Z. T.|Rao|
同期刊论文项目
高居里温度自旋量子结构与器件
期刊论文 96 会议论文 2 专利 4
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