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N-Doped Si0.6Sb2Te3 Material for Applications of Phase-Change Memory
  • ISSN号：1099-0062
  • 期刊名称：Electrochemical and Solid-State Letters
  • 时间：2012
  • 页码：H101-H104
  • 相关项目：高居里温度自旋量子结构与器件
作者： C.|J. H.|Yang|P. X.|Wu|L. C.|Song|Z. T.|Rao|
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高居里温度自旋量子结构与器件
期刊论文 96 会议论文 2 专利 4
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