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中文摘要：
利用等离子体增强化学气相沉积（PECVD）技术，在ZnO／ZnMgO异质结构上制备SiO2作为栅绝缘层，采用光刻与腐蚀工艺制备ZnO／ZnMgO异质结场效应管。电学性能测试及计算结果表明器件栅压调控作用明显。发现栅端漏电流对器件性能造成一定影响。在低温条件下，栅绝缘层产生钝化，从而能够改善器件的性能。
英文摘要：
The characteristics of a ZnO/ZnMgO heterostructure field-effect transistor （HFET） were reported in this paper. The HFET was grown on a-plane sapphire substrate by metal-organic vapor phase epitaxy （MOVPE） technology, and was fabricated by a conventional photolithography tech- nique combined with wet etching. The experiment results indicated that the HFET was an n-channel depletion type with a transconductance of 180 μS · mm-1 and mobility of 182 cm2 · V^-1 . s^-1 at room temperature. The property was limited by leakage current through the SiO2, gate insulator. At low temperature, the performance was improved due to the reduced leakage current.
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