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Peltier effect in doped silicon microchannel plates

ISSN号：1674-4926
期刊名称：《半导体学报：英文版》
时间：0
分类：TN144[电子电信—物理电子学] TQ174.756[化学工程—陶瓷工业;化学工程—硅酸盐工业]
作者机构：[1]Laboratory of Polar Materials and Devices, Ministry of Education, and Department of Electronic Engineering, East China Normal University, Shanghai 200241, China, [2]Department of Microelectronics, Fudan University, Shanghai 200433, China, [3]Department of Physics and Material Sciences, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
相关基金：Project supported by the Shanghai Fundamental Key Project （No. 10JC1404600）, the Shanghai Natural Science Foundation （No. 11ZR1411000）, the Innovation Program of Shanghai Municipal Education Commission （No. 09ZZ46）, the International Collaboration Project （No. 10520704400）, the National Natural Science Foundation of China （Nos. 60990312, 61076060, 61176108）, and the City University of Hong Kong Strategic Research Grant （SRG）（No. 7008009）. The authors would like to extend their sincere thanks to Prof. Qu Xinping （Fudan University） for conducting the phosphorus doping work.

作者：慈朋亮, 石晶, 王斐, 徐少辉, 杨振亚, 杨平雄, 王连卫, 高晨, 朱劁豪

关键词：微通道板, 磷掺杂, 珀尔帖效应, 体硅, Peltier效应, Seebeck系数, 塞贝克系数, 设备连接, silicon microchannel plates, doping, thermoelectric, Peltier effect

中文摘要：

<正>The Seebeck coefficient is determined from silicon microchannel plates（Si MCPs） prepared by photoassisted electrochemical etching at room temperature（25℃）.The coefficient of the sample with a pore size of 5×5μm2,spacing of 1μm and thickness of about 150μm is -852μV/K.along the edge of the square pore.After doping with boron and phosphorus,the Seebeck coefficient diminishes to 256μV/K and -117μV/K along the edge of the square pore,whereas the electrical resistivity values are 7.5×10-3Ω·cm and 1.9×10-3Ω·cm,respectively. Our data imply that the Seebeck coefficient of the Si MCPs is related to the electrical resistivity and is consistent with that of bulk silicon.Based on the boron and phosphorus doped samples,a simple device is fabricated to connect the two type Si MCPs to evaluate the Peltier effect.When a proper current passes through the device,the Peltier effect is evidently observed.Based on the experimental data and the theoretical calculation,the estimated intrinsic figure of merit ZT of the unicouple device and thermal conductivity of the Si MCPs are 0.007 and 50 W/（m·K）, respectively.

英文摘要：

The Seebeck coefficient is determined from silicon microchannel plates （Si MCPs） prepared by photo- assisted electrochemical etching at room temperature （25 ℃）. The coefficient of the sample with a pore size of 5 × 5μm^2, spacing of 1 μm and thickness of about 150 μm is -852μV/K along the edge of the square pore. After doping with boron and phosphorus, the Seebeck coefficient diminishes to 256 μV/K and -117 μV/K along the edge of the square pore, whereas the electrical resistivity values are 7.5 × 10^-3 Ω·cm and 1.9 × 10^-3 Ω·cm, respectively. Our data imply that the Seebeck coefficient of the Si MCPs is related to the electrical resistivity and is consistent with that of bulk silicon. Based on the boron and phosphorus doped samples, a simple device is fabricated to connect the two type Si MCPs to evaluate the Peltier effect. When a proper current passes through the device, the Peltier effect is evidently observed. Based on the experimental data and the theoretical calculation, the estimated intrinsic figure of merit ZT of the unicouple device and thermal conductivity of the Si MCPs are 0.007 and 50 W/（m.K）, respectively.