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中文摘要：
利用溶胶凝胶法在n-Si（100）衬底上成功制备了钒酸铋（Bi2VO5．5）铁电薄膜．利用X射线衍射和原子力显微镜对薄膜的微结构进行了分析，结果表明，Bi2VO5．5，薄膜与n—Si衬底有着良好的晶格匹配并表现出高度的c轴择优取向，晶粒大小均匀．对薄膜电学性质的研究表明，Bi2VO5．5薄膜具有良好的C—V特性，在±4V偏压下，存储窗大干0．4V．当外加偏压为3．2V时，漏电流密度为5×10^-8Acm^-2.1kHz下介电常数和介电损耗分别为95和0．22．这些结果说明，Bi2VO5．5在铁电存储器方面具有较大的应用前景．
英文摘要：
Ferroelectric bismuth vanadate （B2VO5.5 ）thin films were successfully fabricated on n-type Si （100） substrate by sol-gel method. The microstructures of the films were investigated by x-ray diffraction and atomic force microscopy. The results indicate that B2VO5.5 thin films show a good match with the n-Si substrate and a high c-axis preferred orientation with a uniform grain distribution. The investigation on the electrical properties of B2VO5.5 thin films indicates that B2VO5.5 thin films show good capacitance-voltage characteristics, and the memory window is larger than 0.4V when the gate voltage is ±4V. The leakage current density is about 5 × 10^ -8 Acm^-2 when the applied voltage is 3.2V. The dielectric constant and dielectric loss measured at 1 kHz are 95 and 0.22, respectively. All the results indicate that Bi2VO5.5 thin films have potential applications in ferroelectrie memory devices.
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