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中文摘要：
研究了抛物型半导体量子点中弱耦合激子的性质，在有效质量近似下，采用线性组合算符和幺正变换的方法，导出了抛物型半导体量子点中激子的基态能量。讨论了量子点半径和受限强度对半导体量子点中弱耦合激子的基态能量的影响。以GaAs半导体为例进行了数值计算，结果表明：在弱耦合情况下，重空穴激子和轻空穴激子的基态能量随量子点半径的减小而增大，随受限强度ω0的增强而增大。
英文摘要：
Since Haken first investigated the problem of exciton-phonon interaction in polar semiconductor, this field has been greatly studied by other theoretical and experimental methods. Current carrier is restricted at three directions therefore the superposition of hole-electron louds is greatly enhanced, and that lead to the strengthen of coulomb binding energy and oscillator strength, so the effect of exciton play a very important role in semiconductor quantum dot. For the complexing of the exciton＇s structure, a variety of theoretical model have been adopted to research exciton in semiconductor quantum dot. Such as,under the effective-mass appro- ximation, the energy of the ground state and the binding energy of exciton have been calculated by hterature in spheroidal,circular and cube quantum dots without considering the effect of the surface polaron. Lin and Zunger using PM method studied the band gap of spheroidal circular and gamma matrix in SI quantum dot. Xie, et al. studied the properties of exciton in semiconductor quantum dot by using the method of few-body physics. Yosuke Kayanuma and Lavanya, et al. discussed the quantum sizes effect of exciton in a spherical quantum dot by using variational calculational method. The effective Hamihonian of weak and middle-coupling surface excitons of the pure 2D polar crystal are obtained by using Huybrecht＇s linear-combination operator method by Gu, et al. Under parabolic energy band structure, EMA method been mostly used for its intuition property. In this paper,within the effective mass approximation, the energy of the ground state in GaAs quantum dot is calculated by using linear-combination operator method and only considering the influence of the electron-phonon-weak coupling. The properties of exciton in parabolic semiconductor quantum dot are studied by using the methods of a linear-combination operator and unitary transformation. Within the effective-mass approximation, numerical calculations are performed for GaAs semiconductor. The result illustrates tha
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