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中文摘要：
极薄薄膜的覆盖率有时难以用常规方法定量表征。本文提出了一套以单层薄膜的角分辨X射线光电子能谱（ARXPS）模型测定极薄薄膜的厚度h,以恰好不再能检测到基底信号的光电子出射角（TOA）为最小基底信号起飞角θmin,以最大裸露线宽L=h/tgθmin为直径的圆形裸露区模型估算薄膜覆盖率的新方法。将该方法应用于热蒸镀法在羟基化硅基底上制备的极薄的岛状金膜,当TOA〉17.5°时Au 4f的峰强变化与单层膜的ARXPS模型吻合得很好;当TOA〈7.5°时不再能检出基底信号;测得金膜的厚度为16.0±0.4,金膜覆盖率为-92%。
英文摘要：
Coverage rate of extremely-thin films sometimes are hard to be quantitatively characterized by routine methods. A new series of metrology has been proposed in this paper by using the single-layer angle-resolved X-ray photoelectron spectroscopy （ARXPS） model to determine the thickness h of an extremely-thin film, by defining the photoelectron take-off angle （TOA） at which the substrate signals were no longer being detected as the minimum substrate-signal TOA θmin, and by using a model of taking the maximum naked-area length L = h/tgθmin as the diameter of the round snaked-substrate area to estimate the film coverage rate. The metrology was applied to extremely-thin island-shaped gold films on hydroxylated silicon wafers prepared by thermally-evaporated method. Results show that the variation of Au 4f peak intensity fitted the single-layer ARXPS model well when TOA 〉 17.5° and substrate signals could no longer be detected when TOA 〈 7.5°; the measured thickness of the gold film was 16.0 ± 0.4A and the film coverage rate was - 92% .
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