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中文摘要：
用介质阻挡放电（DBD）等离子体增强化学气相沉积（PECVD）的方法,以硅烷为源气体,在沉积区域加载脉冲负偏压进行调节,在玻璃基片上沉积得到具有荧光特征的多孔硅纳米颗粒膜。沉积过程的发射光谱结果表明,在412 nm处出现S iH＊（A2Δ→X2Π0-0）特征峰,证明放电沉积过程中存在不同程度的硅烷裂解。将脉冲负偏压固定在-300 V,当占空比从0.162增大到0.864时,薄膜的红外光谱显示S i—O—S i在1 070cm^-1伸缩振动吸收峰与800 cm^-1的弯曲振动峰都有所增强,而930 cm^-1的S i—H弯曲振动减弱。说明随着占空比的增加,S i—O—S i键的结合越来越明显。
英文摘要：
DBD（Dielectric-Barrier Discharges）-PECVD（Plasma Enhanced Chemical Vapor Deposition） was used to prepare porous nanoparticle silicon-based film from SiH4/Ar/H2 at pressure of 0.5 MPa.Pulsed negative bias voltage was introduced to modulate the process and character of the films.The optical emission spectrum and Fourier transform infrared spectrum were used to study the deposition process.The dissociation of SiH4 was indicated form specific spectrum of SiH＊（A2Δ→X2Π 0-0） at 412 nm.When the pulsed duty cycle changed from 0.162 to 0.864,the stretch vibration band of Si—O—Si at 1 070 cm^-1 and the bending vibration band of Si—O—Si at 800 cm^-1 increased.At the same time,the bending vibration band of Si—H at 930 cm^-1 decreased.More Si—O—Si structure was formed as the increase of the duty cycle.
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