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中文摘要：
采用近常压下等离子体增强化学气相沉积的方法制备得到多孔氧化硅薄膜,并在沉积区域加载偏压对薄膜形貌和性质进行调制。扫描电镜显示偏压条件下沉积的薄膜更加蓬松多孔,常温下阴极射线谱表明：增大偏压的占空比,CL谱中发光峰的位置并不改变,但谱线强度增大。发光峰的位置说明薄膜中的主要成分是Si-O-Si基团,且该种基团以非桥键的形式存在,薄膜中还存在少量的Si-H键,这与红外光谱测试结果一致。X射线衍射结果表明薄膜中的SiO2是非晶态的。
英文摘要：
Porous silica films were prepared by the atmosphere plasma enhanced chemical vapor deposition（APECVD） system.It was modulated by direct current negative bias voltage.Scanning electron microscope（SEM） demonstrated that the morphologies of silica film became more porous and fluffy.Cathodoluminescence（CL） revealed the CL peak did not move with the duty cycle of bias voltage,while the intensity increased with it.The results deemed the majority of component was Si-O-Si groups,which occurred as non-bridging oxygen holes center.The test of fourier transform infrared spectra（FTIR）agreed with the CL.X ray diffraction（XRD）indicated SiO2 was amorphous.
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