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Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN
  • ISSN号：1674-1056
  • 期刊名称：Chinese Physics B
  • 时间：0
  • 页码：20-32
  • 语言：英文
  • 相关项目：GaN基异质结构的光学偏振问题及其控制
作者： Zhao Lu-Bing|Yu Tongjun|Zhijian Yang|Guoyi Zhang|Tao Dai|Wu Jie-Jun|
同期刊论文项目
GaN基异质结构的光学偏振问题及其控制
期刊论文 39 会议论文 6 专利 4
同项目期刊论文
Analysis of junction temperatures in high-power GaN-based LEDs
Anisotropic defect reduction in non-polar a-plane GaN grown by hydride vapor phase epitaxy on maskle
Strain effect s on InxAl1-xN crystalline quality grown on GaN templates by Metalorganic Chemical Vap
Different degradation behaviors of InGaN/GaN MQWs blue and violet LEDs
Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes
Microanalyses of the reverse-bias leakage current increase in the laser lift off GaN-based light emi
Positron annihilation in (Ga, Mn)N: A study of vacancy-type defects
Shock-Assisted Superficial Hexagonal-to-Cubic Phase Transition in GaN/Sapphire Interface Induced by
The origin and evolution of V-defects in InxAl1?xN epilayers grown by metalorganic chemical vapor de
杂质与缺陷对GaMnAs光学特性影响的研究
A genetic algorithm research on Lorentz oscillator model in infrared spectra of GaMnN
Spontaneous luminescence polarizations of wurtzite InGaN/GaN quantum wells
Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by m
Properties of GaN-based light-emitting diode thin film chips fabricated by laser lift-off and transf
Magnetic and magneto-transport properties of Ga1-xMnxN grown by MOCVD
Length dependence of polarization in spontaneous edge emissions from InGaN/AlGaN MQWs laser diodes
Influence of growth rate on structural and optical properties of AlInGaN quaternary epilayers
Polarization of edge emission from III-nitride light emitting diodes of emission wavelength from 395
Luminescence degradation of InGaN/GaN violet LEDs
Strain effect on photoluminescences from InGaN MQWs with different barriers grown by MOCVD
Electrical characteristics of InGaN/AlGaN and InGaN/GaN MQW near UV-LEDs
Study of the structural damage in the (0001) GaN epilayer processed by laser lift-off techniques
Study on structure of AlGaN on AlN interlayer by synchrotron radiation XRD and RBS
Modified transmission line model to investigate non-Ohmic contact behavior and its application on Ga
Influence of V/III flux ratio on electrical properties of AlInGaN/Gan heterostructures grown by MOCV
The origins of double emission peaks in electroluminescence spectrum from InGaN/GaN MQW LED
InGaN/GaN和InGaN/AlGaN多量子阱中应变对光致发光特性的影响
Strain effects on the polarized optical properties of InGaN with different In compositions
采用AlGaN/GaN阻挡层的大功率InGaN/GaN MQWs蓝光LED
GaMnN材料红外光谱中洛伦兹振子模型的遗传算法研究
垂直电极结构GaN基发光二极管的研制
激光剥离转移衬底的薄膜GaN基LED器件特性分析
Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition
期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406