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Properties of GaN-based light-emitting diode thin film chips fabricated by laser lift-off and transf
  • ISSN号：0268-1242
  • 期刊名称：Semiconductor Science and Technology
  • 时间：0
  • 页码：576-579
  • 语言：英文
  • 相关项目：GaN基异质结构的光学偏振问题及其控制
作者： Qi, Shengli|Kang, Xiangning|Lian, Guijun|Xie, Rongsi|Sun, Yongjian|Zhang, Guoyi|Li, Minggang|Huang, Sen|Chen, Zhizhong|Yu, Tongjun|
同期刊论文项目
GaN基异质结构的光学偏振问题及其控制
期刊论文 39 会议论文 6 专利 4
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