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Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by m
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：0
  • 页码：1-5
  • 语言：英文
  • 相关项目：GaN基异质结构的光学偏振问题及其控制
作者： Dai, T.|Fang, H.|Zhao, L. B.|Zhang, G. Y.|Yang, Z. J.|Wang, Y.|Yu, T. J.|Sang, L. W.|
同期刊论文项目
GaN基异质结构的光学偏振问题及其控制
期刊论文 39 会议论文 6 专利 4
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