位置：成果数据库 > 期刊 > 期刊详情页
Two-bit memory devices based on single-wall carbon nanotubes: demonstration and mechanism
  • ISSN号：0957-4484
  • 期刊名称：Nanotechnology
  • 时间：0
  • 页码：125-206
  • 语言：英文
  • 相关项目：集成电路工艺研究（包括ＣＡＭ）
作者： Guan, Lunhui|Liu, Jia|Shi, Zujin|Zhang, Xing|Wang, Chuan|Huang, Ru|Guo, Ao|Fu, Yunyi|Gu, Zhennan|
同期刊论文项目
集成电路工艺研究（包括ＣＡＭ）
期刊论文 55 会议论文 53 获奖 2 专利 35
同项目期刊论文
A control-gate-assisted erasing method for a single-poly EEPROM cell with metallic control gate stru
Investigation on Self-Heating Effect in Gate-All-Around Silicon Nanowire MOSFETs From Top-Down Appro
Random telegraph signal noise in gate-all-around silicon nanowire transistors featuring Coulomb-bloc
Investigations on the physical limitation and electrostatic improvement of a gate-all-around silicon
Challenges of 22 nm and beyond CMOS technology
A model for radiation-induced off-state leakage current in N-channel metal-oxide-semiconductor trans
Effective crosstalk isolation with post-CMOS selectively grown porous silicon technique for radio fr
A comparative study on analog/RF performance of UTB GOI and SOI devices
A low-voltage flash memory cell utilizing the gate-injection program/erase method with a recessed ch
Characteristics and fluctuation of negative bias temperature instability in Si nanowire field-effect
Investigation of Different Strain Configurations in Gate-All-Around Silicon Nanowire Transistor
Novel Thermally Stable Single-Component Organic-Memory Cell Based on Oxotitanium Phthalocyanine Mate
Investigation of the off-state behavior in deep-submicron NMOSFETs under heavy ion irradiation by 3D
High-Performance Si Nanowire Transistors on Fully Si Bulk Substrate From Top-Down Approach: Simulati
Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal-Oxide-Se
High Density Capacitorless Dynamic Random Access Memory Cell with Quasi Silicon-on-Insulator Structu
Performance Improvement of Capacitorless Dynamic Random Access Memory Cell with Band-Gap Engineered
Investigation of gate-all-around silicon nanowire transistors for ultimately scaled CMOS technology
Deteriorated radiation effects impact on the characteristics of MOS transistors with multi-finger co
The Combined Impact of Total Ionizing Dose Effect and Negative Bias Temperature Stress on Deep Sub-M
Forming-less Unipolar TaOx-based RRAM with Large CC-independence Range for High Density Memory Appli
Investigation of Nanowire Line-Edge Roughness Impacts on Gate-all-around Silicon Nanowire MOSFETs
Flexible single-component-polymer resistive memory for ultrafast and highly compatible nonvolatile m
Unipolar TaOx-based resistive change memory realized with electrode engineering
超陡倒掺杂分布对超深亚微米金属-氧化物-半导体器件总剂量辐照特性的改善
Performance improvement of the EEPROM cells with the standard logic process featuring a metal finger
Negative-bias temperature instability in gate-all-around silicon nanowire MOSFETs: Characteristic mo
Top-down fabrication of shape controllable Si nanowires based on conventional CMOS process
Low-field mobility and carrier transport mechanism transition in nanoscale MOSFETs
Fabrication of 32 nm vertical nMOSFETs with asymmetric graded lightly doped drain structure
A novel source/drain on void (SDOV) MOSFET implemented by local co-implantation of hydrogen and heli
Experimental Investigations on Carrier Transport in Si Nanowire Transistors: Ballistic Efficiency an
High-Performance BOI FinFETs Based on Bulk-Silicon Substrate
Tradeoff between speed and static power dissipation of ultra-thin body SOI MOSFETs
Corner effects in double-gate/gate-all-around MOSFETs
High-performance integrated inductor and effective crosstalk isolation using post-CMOS selective gro
The localized-SOI MOSFET as. a candidate for Analog/RF applications
Spontaneously formed closed rings of single-wall carbon nanotube bundles and their physical mechanis
High-Q Integrated Inductor Using Post-CMOS Selective Grown Porous Silicon (SGPS) Technique for RFIC
A Novel Dual-Doping Floating-Gate (DDFG) Flash Memory Featuring Low Power and High Reliability Appli
A 0.4-V Low Noise Amplifier Using Forward Body Bias Technology for 5 GHz Application
Quasi-SOI MOSFETs—A Promising Bulk Device Candidate for Extremely Scaled Era
NiSi金属栅电学特性的热稳定性研究
Analog/RF Performance of Si Nanowire MOSFETs and the Impact of Process Variation
Simulation of plasma doping process by using the localized molecular dynamics method
A CMOS-compatible silicon substrate optimization technique and its application in radio frequency crosstalk isolation