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Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal-Oxide-Se
  • ISSN号：0021-4922
  • 期刊名称：Japanese Journal of Applied Physics
  • 时间：0
  • 页码：5175-5182
  • 语言：英文
  • 相关项目：集成电路工艺研究（包括ＣＡＭ）
作者： Yu, Tao|Wang, Runsheng|Zhang, Liangliang|Kirsch, Paul|Zhuge, Jing|Wang, Yangyuan|Liu, Changze|Tseng, Hsing-Huang|Huang, Ru|
同期刊论文项目
集成电路工艺研究（包括ＣＡＭ）
期刊论文 55 会议论文 53 获奖 2 专利 35
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