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Corner effects in double-gate/gate-all-around MOSFETs
  • ISSN号：1009-1963
  • 期刊名称：CHINESE PHYSICS
  • 时间：0
  • 页码：812-816
  • 语言：中文
  • 分类：TN386.1[电子电信—物理电子学]
  • 作者机构：[1]Institute of Microelectronics, Peking University, Beijing 100871, China
  • 相关基金：Project supported by State Key Fundamental Research Project of China （Grant No 2000036501） and the National Natural Science Foundation of China （Grant No 90207004）.
  • 相关项目：集成电路工艺研究（包括ＣＡＭ）
作者： Zhang Xing|Zhou Fa-Long|Hou Xiao-Yu|Huang Ru|
关键词： MOSFET, 锐角效应, 双栅极, 环绕栅极, 晶体管, GAA, DG, DIBL, S-top, D-top, corner effect
中文摘要：

E-mail： huangr@ime.pku.edu.cn

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