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Investigation of gate-all-around silicon nanowire transistors for ultimately scaled CMOS technology
  • ISSN号：1673-3487
  • 期刊名称：Frontiers of Physics in China
  • 时间：0
  • 页码：414-421
  • 语言：英文
  • 相关项目：集成电路工艺研究（包括ＣＡＭ）
作者： Wang, Run-sheng|Huang, Ru|
同期刊论文项目
集成电路工艺研究（包括ＣＡＭ）
期刊论文 55 会议论文 53 获奖 2 专利 35
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