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Negative-bias temperature instability in gate-all-around silicon nanowire MOSFETs: Characteristic mo
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：0
  • 页码：3442-3450
  • 语言：英文
  • 相关项目：集成电路工艺研究（包括ＣＡＭ）
作者： Yu, Tao|Kim, Dong-Won|Wang, Yangyuan|Park, Donggun|Zhang, Liangliang|Huang, Ru|Wang, Runsheng|Liu, Changze|
同期刊论文项目
集成电路工艺研究（包括ＣＡＭ）
期刊论文 55 会议论文 53 获奖 2 专利 35
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