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Improved Resistive Switching Uniformity in Cu/HfO2/Pt Devices by Using Current Sweeping Mode
  • 期刊名称：IEEE Electron Device Letters
  • 时间：0
  • 页码：1053-1055
  • 语言：英文
  • 相关项目：复合多晶硅栅射频高增益MOSFET的研究
作者： Wang, Y|Zhang, S|Dai, YH|Liu, Q| Lv, HB|Li, YT |Wang, W| Lian, WT|Long, SB|Chen, JN|Liu, M|
同期刊论文项目
复合多晶硅栅射频高增益MOSFET的研究
期刊论文 15 会议论文 6
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