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A study of cycling induced degradation mechanisms in Si nanocrystal memory devices
  • 期刊名称：Nanotechnology
  • 时间：0
  • 页码：9582-9593
  • 语言：英文
  • 相关项目：复合多晶硅栅射频高增益MOSFET的研究
作者： Wang, Q|Yang, XN|Chen, JN|Jiang, DD|Yu, ZA|Zhang, B|Wang, Y| Liu, J |Chen, JN|Zhang, MH|Huo, ZL|
同期刊论文项目
复合多晶硅栅射频高增益MOSFET的研究
期刊论文 15 会议论文 6
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