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Low-Power and Highly Uniform Switching in ZrO2-Based ReRAM With a Cu Nanocrystal Insertion Layer
  • 期刊名称：IEEE Electron Device Letters
  • 时间：0
  • 页码：1299-1301
  • 语言：英文
  • 相关项目：复合多晶硅栅射频高增益MOSFET的研究
作者： Tanachutiwat, S|Huo, ZL|Wang, Q|Wang, W|Liu, M|Zhang, MH| Liu, Q|Long, SB| Li, YT| Chen, JN |
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复合多晶硅栅射频高增益MOSFET的研究
期刊论文 15 会议论文 6
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