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Improvement of Resistive Switching Properties in ZrO2-Based ReRAM With Implanted
  • 期刊名称：IEEE Electron Device Letters
  • 时间：0
  • 页码：1335-1337
  • 语言：英文
  • 相关项目：复合多晶硅栅射频高增益MOSFET的研究
作者： Zuo, QY|Liu, Q|Liu, M|Wang, W |Chen, JN|Long, SB| Zhang, S|
同期刊论文项目
复合多晶硅栅射频高增益MOSFET的研究
期刊论文 15 会议论文 6
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