中文摘要：

对一种新型半绝缘SOIMOS器件的阈值电压进行建模,该器件采用源漏注氧OISD技术,具有优良的自加热效应抑制能力和耐压特性.由于沟道中存在复杂的二维势场分布,OISD MOSFET阈值电压,亚阈值斜率及短沟道效应均受到硅窗口尺寸的调制.给出了一个基于数值仿真的OISD MOSFET阈值电压简单模型,该模型可指导器件结构设计,并通过MEDICI二维数值仿真进行验证.最后,对OISD MOSFET亚阈值斜率、短沟道阈值电压偏移以及DIBL因子等重要电学参量进行详细的研究.

英文摘要：

A semi-SOI MOSFET produced by drain/source oxygen implantation can suppress self-heating effect and improve breakdown voltage. However owing to the complicated 2-D electric field distribution, the threshold voltage, the sub-threshold slope and the SCEs （short channel effects） of OISD MOSFET are modulated by the size of the silicon window. A compact threshold voltage model based on 2-D numerical simulation was provided for OISD MOST design. At last the threshold voltage model was verified and several other important electrical parameters, including sub-threshold slope, DIBL factor and SCEs, were analyzed in details with the help of MEDICI 2D simulator.