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Research on distribution of aluminum in electron beam melted silicon ingot
  • ISSN号：0042-207X
  • 期刊名称：Vacuum
  • 时间：2013.10.10
  • 页码：27-31
  • 相关项目：电子束注入对多晶硅Si/SiO2界面处杂质硼迁移的影响研究
作者： Jiang, Dachuan|Shi, Shuang|Tan, Yi|Pang, Dayu|Dong, Wei|
同期刊论文项目
电子束注入对多晶硅Si/SiO2界面处杂质硼迁移的影响研究
期刊论文 21 专利 5
同项目期刊论文
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