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Numerical simulation for parameter optimization of silicon purification by electron beam melting
  • ISSN号：0042-207X
  • 期刊名称：Vacuum
  • 时间：2013.9.9
  • 页码：18-24
  • 相关项目：电子束注入对多晶硅Si/SiO2界面处杂质硼迁移的影响研究
作者： Tan, Yi|Wen, Shutao|Shi, Shuang|Jiang, Dachuan|Dong, Wei|Guo, Xiaoliang|
同期刊论文项目
电子束注入对多晶硅Si/SiO2界面处杂质硼迁移的影响研究
期刊论文 21 专利 5
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