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THE KINK EFFECTS IN NANO-GaAs DEVICES DUE TO MULTI-VALLEY ELECTRON TRANSPORT
  • ISSN号：0217-9792
  • 期刊名称：International Journal of Modern Physics B
  • 时间：2013.10.10
  • 页码：-
  • 相关项目：纳米集成电路的量子混沌及其对电路性能的影响
作者： Mao, Ling-Feng|Ji, A. M.|Zhu, C. Y.|Wang, Z. O.|Zhang, L. J.|Li, Y. Z.|Wang, S. D.|Yan, Y.|
同期刊论文项目
纳米集成电路的量子混沌及其对电路性能的影响
期刊论文 23 会议论文 2
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