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Leakage Power Reduction Techniques of 55 nm SRAM Cells
  • ISSN号：0256-4602
  • 期刊名称：IETE Technical Review
  • 时间：2011.4.4
  • 页码：135-145
  • 相关项目：纳米集成电路的量子混沌及其对电路性能的影响
作者： Zhang, Li-Jun|Wu, Chen|Ma, Ya-Qi|Zheng, Jian-Bin|Mao, Ling-Feng|
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纳米集成电路的量子混沌及其对电路性能的影响
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