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Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/
  • ISSN号：1931-7573
  • 期刊名称：Nanoscale Research Letters
  • 时间：2012.8.3
  • 页码：434-
  • 相关项目：AlGaN/GaN异质结场效应晶体管中与AlGaN势垒层应变分布相关的载流子散射机制研究
作者： 林兆军|
同期刊论文项目
AlGaN/GaN异质结场效应晶体管中与AlGaN势垒层应变分布相关的载流子散射机制研究
期刊论文 42 会议论文 6
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