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The influence of the channel electric field distribution on the polarization Coulomb field scatterin
期刊名称:Journal of Semiconductors
时间:2014.11
页码:124007-1-124007-5
相关项目:AlGaN/GaN异质结场效应晶体管中与AlGaN势垒层应变分布相关的载流子散射机制研究
作者:
Feng Zhihong|Luan Chongbiao|Yang Ming|Wang Yutang|
同期刊论文项目
AlGaN/GaN异质结场效应晶体管中与AlGaN势垒层应变分布相关的载流子散射机制研究
期刊论文 42
会议论文 6
同项目期刊论文
Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor
Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect trans
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostru
Directly extracting both threshold voltage and series resistance from the conductance-voltage curve
Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostruc
Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility
Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure
A study of the impactof gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect
Influence of the channel electric field distribution on the polarization Coulomb field scattering in
Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure f
Comparison for the carrier mobility between the III-V nitrides and AlGaAs/GaAs heterostructure field
Influence of polarization coulomb field scattering on the subthreshold swing in depletion-mode AlGaN
Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN
Improvement of switching characteristics bysubstrate bias in AlGaN/AlN/GaN heterostructure field eff
Influence of sapphire substrate thickness on thecharacteristics of AlGaN/AlN/GaN heterostructure fie
Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterost
The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN h
A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterost
Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN
Effects of GaN cap layer thickness on an AlN/GaN heterostructure
Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier
Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transist
A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from
Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN
Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/
Analysis of interface trap states in InAlN/AlN/GaN heterostructures
Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
Comparison for the carrier mobility between the III-V nitrides and AIGaAs/GaAs heterostructure field-effect transistors
Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors
Comparison of electrical characteristic between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes
Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes