位置：成果数据库 > 期刊 > 期刊详情页
Comparison for the carrier mobility between the III-V nitrides and AlGaAs/GaAs heterostructure field
  • ISSN号：1674-4926
  • 期刊名称：Journal of Semiconductors
  • 时间：2014
  • 页码：094007-1-094007-6
  • 相关项目：AlGaN/GaN异质结场效应晶体管中与AlGaN势垒层应变分布相关的载流子散射机制研究
作者： Feng Zhihong|Zhao Jingtao|Zhou Yang|Yang Ming|
同期刊论文项目
AlGaN/GaN异质结场效应晶体管中与AlGaN势垒层应变分布相关的载流子散射机制研究
期刊论文 42 会议论文 6
同项目期刊论文
Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor
Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect trans
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostru
Directly extracting both threshold voltage and series resistance from the conductance-voltage curve
Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostruc
Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility
The influence of the channel electric field distribution on the polarization Coulomb field scatterin
Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure
A study of the impactof gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect
Influence of the channel electric field distribution on the polarization Coulomb field scattering in
Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure f
Influence of polarization coulomb field scattering on the subthreshold swing in depletion-mode AlGaN
Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN
Improvement of switching characteristics bysubstrate bias in AlGaN/AlN/GaN heterostructure field eff
Influence of sapphire substrate thickness on thecharacteristics of AlGaN/AlN/GaN heterostructure fie
Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterost
The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN h
A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterost
Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN
Effects of GaN cap layer thickness on an AlN/GaN heterostructure
Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier
Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transist
A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from
Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN
Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/
Analysis of interface trap states in InAlN/AlN/GaN heterostructures
Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
Comparison for the carrier mobility between the III-V nitrides and AIGaAs/GaAs heterostructure field-effect transistors
Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors
Comparison of electrical characteristic between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes
Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes
期刊信息
  • 《半导体学报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编：李树深
  • 地址：北京912信箱
  • 邮编：100083
  • 邮箱：cjs@semi.ac.cn
  • 电话：010-82304277
  • 国际标准刊号：ISSN：1674-4926
  • 国内统一刊号：ISSN：11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,英国英国皇家化学学会文摘,中国北大核心期刊（2000版）
  • 被引量:7754