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Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility
ISSN号:0947-8396
期刊名称:Applied Physics A-Materials Science & Processi
时间:2014.9
页码:2065-2075
相关项目:AlGaN/GaN异质结场效应晶体管中与AlGaN势垒层应变分布相关的载流子散射机制研究
作者:
Feng, Zhihong|Zhao, Jingtao|Yang, Qihao|Yang, Ming|
同期刊论文项目
AlGaN/GaN异质结场效应晶体管中与AlGaN势垒层应变分布相关的载流子散射机制研究
期刊论文 42
会议论文 6
同项目期刊论文
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Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN
Effects of GaN cap layer thickness on an AlN/GaN heterostructure
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Analysis of interface trap states in InAlN/AlN/GaN heterostructures
Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
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